Wednesday, December 5, 2012

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Adv. Mater.

Xiaodan Gu , Zuwei Liu , Ilja Gunkel , S. T. Chourou , Sung Woo Hong ,
Deirdre L. Olynick , * and Thomas P. Russell * 

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.

Thumbnail image of graphical abstract

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